2022   
✦In order to expand the company's production operations, a new factory was built in Yilan.
✦Becoming more Formosa Microsemi's operating headquarters in Yilan.

2021   
✦In order to strengthen the company's operation and development, Formosa Microsemi added a new management team and wafer fabrication process to increase the service scale.

2017   
✦Obtained DQS IATF16949 certification for the automotive industry.

2012   
✦To develop the market needs, switch to invest in ShenZhen Sales Office.
✦We introduced strategic investors including Sunsino Venture for SME and Executive Yuan development fund to strengthen and complete our financial structure.
✦We had developed well-through type diodes and applied patent for its manufacture technology in Taiwan, USA and China.obtained patent in certificate qualification.

2011   
✦We had developed Surface Mount CurrentRegulative Diodes (CRD) which possessed schottky barrier for energy saving light bulbs and obtained patent in Taiwan, USA and China.
✦We had applied patent of CSP (chip scale package) rectifier & diodes and its manufacture technology in Taiwan, USA and China. Certificate qualification was under examination.
✦We invested Houjou Electronics Limited and owned 100% stock ownership.

2010   
✦We had developed CSP (chip scale package) rectifier & diodes successfully and obtained patent in Taiwan, USA and China. We were the first one in the world to own such technology.

2008   
✦Formosa Microsemi Co., Ltd was certified TS16949 by UL.
✦Formosa I-Lan factory was established at North East of Taiwan.

2007   
✦Hangzhou Formosa Micro-Electronics Co., Ltd. purchased the capital stockholder's rights to be the sole ownership company.
✦We obtained PROC patent of bi-metal-ceramic composition and its manufacture technology used in the power semiconductor components; invention certification no. 390095.

2006   
✦We obtained the patent of bi-metal-ceramic composition and its manufacture technology used in the power semiconductor components.

2005   
✦We obtainedISO9001 certification in both of component design and package assembly.
✦We obtained the utility patent certification ofpower semiconductor component with new dissipation structure; new type certification no. M697760.
✦We obtained the patent certification ofpower semiconductor component with new dissipation structure; new type certification no. M256585.

2004   
✦We obtained PROC patent certification of both invention and manufacture technology of array surface mounted diode; certification no.182365.
✦We obtained Japanese certificateof utility model registration of power semiconductor components with new dissipation structure;registration no. 3105138.
✦We obtained PROC patent certification of the new structure rectifiers with electronic capacity displacement without co-vibration influence (no noise); certification no. 625523.

2003   
✦We obtained PROC patent certification of both invention and manufacture technology of array surface mounted diode & rectifier; certification no. 129439.
✦We obtained the patent certification of surface mounted diodes & rectifiers with improved structure; new type certification no.195776.

2001   
✦In order to be more competitive and to expand market, we founded Hangzhou Formosa Micro-Electronic Co., Ltd. joint ventures with Hangzhou Hangxin Electronic,manufacturing surface mounted diodes and rectifiers in China.
✦We obtained the patent certification of both the invention and manufacture technology of array surface mounted diode; the invention certification no.1341255.

2000   
✦We obtained the patent certification of the manufacture technology of surface mounted diodes and rectifiers; invention certification no. 124076.

1999   
✦We had developed the new type surface mounted products, leading the assembly technology all over the world in the field of diodes and rectifiers.

1996   
✦Formosa Microsemi Corporation was established.'s Ministry of Economic Affairs. Formosa Microsemi Co., Ltd. was established and a manufacturer of schottky rectifiers.。